Mono M1 3BB
(Anisotropically Texturized Surface)
(Anisotropically Texturized Surface)
产品规范
电池类型：单晶硅太阳能电池
Cell type: Mono-crystalline silicon solar cell
尺寸规格：156.75mmx156.75mm±0.25mm 205mm±0.25mm(对角线长度)
Dimension: 156.75mmx156.75mm±0.25mm 205mm±0.25mm(Diagonal length)
电池厚度：200μm±20μm
Cell Thickness: 200μm±20μm
正面(－)：氮化硅减反射涂层三根1.4±0.05mm宽度的主栅线之间的间距52mm
Front side(－): Silicon nitride anti-reflection coating Three 1.4±0.05mm wide busbars with distance 52mm
背面(＋)：全表面的铝背场三根2.4±0.05mm间断的背电极焊接设计
Back side(＋) : Full surface aluminum back surface field Three 2.4±0.05mm discontinuous soldering pads
|
Pmpp(W)
|
Eff(%)
|
Voc(V)
|
Isc(A)
|
Vmpp(V)
|
Impp(A)
|
|
|
190
|
4.61
|
19.0
|
0.639
|
9.30
|
0.535
|
8.62
|
|
191
|
4.64
|
19.1
|
0.640
|
9.31
|
0.536
|
8.65
|
|
192
|
4.66
|
19.2
|
0.641
|
9.32
|
0.537
|
8.68
|
|
193
|
4.69
|
19.3
|
0.642
|
9.33
|
0.539
|
8.70
|
|
194
|
4.71
|
19.4
|
0.643
|
9.33
|
0.540
|
8.72
|
|
195
|
4.74
|
19.5
|
0.643
|
9.34
|
0.541
|
8.75
|
|
196
|
4.76
|
19.6
|
0.644
|
9.35
|
0.542
|
8.78
|
|
197
|
4.78
|
19.7
|
0.645
|
9.36
|
0.543
|
8.81
|
|
198
|
4.81
|
19.8
|
0.646
|
9.37
|
0.544
|
8.84
|
|
199
|
4.83
|
19.9
|
0.646
|
9.38
|
0.544
|
8.88
|
|
200
|
4.86
|
20.0
|
0.646
|
9.39
|
0.545
|
8.91
|
|
201
|
4.88
|
20.1
|
0.647
|
9.40
|
0.545
|
8.96
|
温度系数
|
Voc
|
Isc
|
FF
|
Power
|
|
-2.108mV/K
|
4.48mA/K
|
-0.1203%/K
|
-0.432%/K
|
光辐射响应
|
W/m²
|
1000
|
900
|
500
|
300
|
200
|
|
Isc(mA)
|
8875
|
7969.1
|
4426.8
|
2669.8
|
1765.4
|
|
Voc(mV)
|
620
|
618
|
601.1
|
587.2
|
575.8
|
典型的I-V 曲线
光谱响应曲线
电性能指标
参数：A级 Parameter: Grade A
电池效率/最大功率点测量电池的效率（或最大功率点）依据上文提到的标准(AM 1 .5, 1000 W/m², 25 °C)
Cell efficiency/Pmpp Measured cell efficiency (or Pmpp) according to above mentioned bin criteria (AM 1 .5, 1000 W/m², 25 °C)
分流电阻：>30 Ohm Shunt Resistivity: >30 Ohm
反向逆电流Irev 2<1.5A 偏置电压-12 V 和温度25℃ Reverse dark current Irev 2<1.5A at -12 V and 25℃
电池效率/最大功率点测量电池的效率（或最大功率点）依据上文提到的标准(AM 1 .5, 1000 W/m², 25 °C)
Cell efficiency/Pmpp Measured cell efficiency (or Pmpp) according to above mentioned bin criteria (AM 1 .5, 1000 W/m², 25 °C)
分流电阻：>30 Ohm Shunt Resistivity: >30 Ohm
反向逆电流Irev 2<1.5A 偏置电压-12 V 和温度25℃ Reverse dark current Irev 2<1.5A at -12 V and 25℃